Copper cleaning and protection formulations was written by Barnes, Jeffrey A.; Benac, Brian; Boggs, Karl E.; Feng, Lin; Liu, Jun; Petruska, Melissa A.; Yan, Xiaodong; Zhang, Peng. And the patent was published on April 29,2010.Product Details of 550-33-4 The following contents are mentioned in the patent:
Disclosed is a cleaning composition and process for cleaning post-chem. mech. polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielec. material or the copper interconnect material. This study involved multiple reactions and reactants, such as (2R,3S,4R,5R)-2-(Hydroxymethyl)-5-(9H-purin-9-yl)tetrahydrofuran-3,4-diol (cas: 550-33-4Product Details of 550-33-4).
(2R,3S,4R,5R)-2-(Hydroxymethyl)-5-(9H-purin-9-yl)tetrahydrofuran-3,4-diol (cas: 550-33-4) belongs to tetrahydrofuran derivatives. Tetrahydrofuran and dihydrofuran form the basic structural unit of many naturally occurring scaffolds like gambieric acid A and ciguatoxin, goniocin, and some biologically active molecules. THF (Tetrahydrofuran) is also used as a starting material for the synthesis of poly(tetramethylene ether) glycol (PTMG), etc.Product Details of 550-33-4
Referemce:
Tetrahydrofuran – Wikipedia,
Tetrahydrofuran | (CH2)3CH2O – PubChem