Post chemical mechanical polishing formulations and method of use was written by Liu, Jun; Barnes, Jeffrey A.; Zhang, Peng; Sun, Laisheng; Medd, Steven. And the patent was published on August 6,2015.Computed Properties of C10H12N4O4 The following contents are mentioned in the patent:
A cleaning composition and process for cleaning post-chem. mech. polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amines and ammonium-containing salts. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielec. material or the copper interconnect material. This study involved multiple reactions and reactants, such as (2R,3S,4R,5R)-2-(Hydroxymethyl)-5-(9H-purin-9-yl)tetrahydrofuran-3,4-diol (cas: 550-33-4Computed Properties of C10H12N4O4 ).
(2R,3S,4R,5R)-2-(Hydroxymethyl)-5-(9H-purin-9-yl)tetrahydrofuran-3,4-diol (cas: 550-33-4) belongs to tetrahydrofuran derivatives. Tetrahydrofuran (THF), or oxolane, is mainly used as a precursor to polymers. Being polar and having a wide liquid range, THF is a versatile solvent. THF (Tetrahydrofuran) is also used as a starting material for the synthesis of poly(tetramethylene ether) glycol (PTMG), etc.Computed Properties of C10H12N4O4
Referemce:
Tetrahydrofuran – Wikipedia,
Tetrahydrofuran | (CH2)3CH2O – PubChem